History of Science and Engineering Annotation << Back THIN-FILM FERROELECTRIC STRUCTURES AS COMPONENTS OF THE NEW ELEMENT BASE OF MICROELECTRONICS E.G. Kostsov Investigations of the laboratory of thin-fi lm ferroelectric structures are related to the development of multilayer structures based on ferroelectric thin fi lms for microelectronic elements. They include: – dynamic random-access memory and ferroelectric random-access memory elements. Such devices can be reprogrammed by applying an electric fi eld, and information recording is performed by voltage pulses. Information readout, on the other hand, can be carried out both by voltage pulses and by radiation pulses; – fast pyroelectric thermal non-insulated radiation detectors. The possibility of constructing uncooled thermal imaging megapixel arrays on the basis of these detectors is investigated; – new class of microelectromechanical (MEMS) systems where electro-mechanical energy conversion occurs in nanometer interelectrode gaps, which ensures a high energy capacity of MEMS devices and short response times; – MEMS energy generators capable of producing electrical energy from microvibrations of surrounding objects and of collecting «energy waste». Keywords: Ferroelectric; thin fi lm; memory element; pyroelectric; MEMS; micro-generator of energy; electrostatics; electronic glue. Contacts: Е-mail: kostsov@iae.nsk.su Pp. 078-087.